000 01086nam a2200313u 4500
001 00819212
003 PWmBRO
008 840326s1984 wb a b 00110 eng
010 _a 88900541
020 _a0387129952 (U.S.)
041 1 _aengrus
050 0 _aQC611.8.D66
_bS5513 1984
082 0 _a537.6/22�19
090 _a537.6/22/S558e
100 1 0 _aShklovski i, B. I.
_q(Boris Isaakovich),
_d1944-
240 1 0 _a Elektronnye svo istva legirovannykh poluprovodnikov.
_lEnglish
245 1 0 _aElectronic properties of doped semiconductors /
_cB.I. Shklovskii and A.L. Efros.
260 0 _aBerlin :
_bSpringer-Verlag,
_c1984.
300 _axii, 388 p. :
_bill.
440 0 _aSpringer series in solid-state sciences ;
_v45
500 _aTranslation of: Elektronnye svo istva legirovannykh poluprovodnikov.
650 0 _aDoped semiconductors.
650 0 _aElectron-electron interactions.
650 0 _aHopping conduction.
650 0 _aMaterials at low temperatures.
700 1 0 _aEfros, A. L.
_q(Alekse i L vovich),
_d1938-
942 _2ddc
994 0 1 _aT1001 068 137
999 _c53457
_d53457