000 | 01086nam a2200313u 4500 | ||
---|---|---|---|
001 | 00819212 | ||
003 | PWmBRO | ||
008 | 840326s1984 wb a b 00110 eng | ||
010 | _a 88900541 | ||
020 | _a0387129952 (U.S.) | ||
041 | 1 | _aengrus | |
050 | 0 |
_aQC611.8.D66 _bS5513 1984 |
|
082 | 0 | _a537.6/22�19 | |
090 | _a537.6/22/S558e | ||
100 | 1 | 0 |
_aShklovski i, B. I. _q(Boris Isaakovich), _d1944- |
240 | 1 | 0 |
_a Elektronnye svo istva legirovannykh poluprovodnikov. _lEnglish |
245 | 1 | 0 |
_aElectronic properties of doped semiconductors / _cB.I. Shklovskii and A.L. Efros. |
260 | 0 |
_aBerlin : _bSpringer-Verlag, _c1984. |
|
300 |
_axii, 388 p. : _bill. |
||
440 | 0 |
_aSpringer series in solid-state sciences ; _v45 |
|
500 | _aTranslation of: Elektronnye svo istva legirovannykh poluprovodnikov. | ||
650 | 0 | _aDoped semiconductors. | |
650 | 0 | _aElectron-electron interactions. | |
650 | 0 | _aHopping conduction. | |
650 | 0 | _aMaterials at low temperatures. | |
700 | 1 | 0 |
_aEfros, A. L. _q(Alekse i L vovich), _d1938- |
942 | _2ddc | ||
994 | 0 | 1 | _aT1001 068 137 |
999 |
_c53457 _d53457 |