Neutron-transmutation-doped silicon edited by Jens Guldberg
By: International Conference on Neutron Transmutation Doping of Silicon (3rd : 1980 : Copenhagen, Denmark).
Contributor(s): Guldberg, Jens.
Material type:
BookPublisher: New York Plenum Press c1981Description: x, 505 p. ill. 26 cm.Subject(s): Semiconductor doping, Neutron transmutation | Silicon -- DefectsDDC classification: 621.3815
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Matheson Library | Matheson Library | Main Collection | Main Collection | 621.38152 I61n (Browse shelf) | Available | 010618 |
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| 621.38152 G651s Semiconductor device technology | 621.38152 G686 Solid-state power electronics / | 621.38152 H236 Handbook of semiconductor electronics : | 621.38152 I61n Neutron-transmutation-doped silicon | 621.38152 M894 MOS devices | 621.38152 S433 SCR applications handbook / | 621.38152 S471 Semiconductor devices |
"Proceedings of the Third International Conference on Neutron Transmutation Doping of Silicon, held August 27-29, 1980, in Copenhagen, Denmark."
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